HMS30C7202N Просмотр технического описания (PDF) - MagnaChip Semiconductor

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HMS30C7202N

Highly-intergrated MPU

MagnaChip Semiconductor 

HMS30C7202N

12.2 DC characteristics

All characteristics are specified at VDD = 3.0 to 3.6V and VSS = 0V over the junction temperature range of 0 to

100 °C.

Power Dissipation

Symbol

PD

PDWN

Parameter

Min

[Run Mode]

With LCD @70.04MHz

Without LCD @70.04MHz

[Deep Sleep Mode]

RTC Enable

120

RTC Disable

30

Max

Units

190

mW

140

mW

160

uW

70

uW

CMOS/TTL Compatible Pin

Symbol

VIL

VIH

VOL

Parameter

Low-level Input Voltage

High-level Input Voltage

Low-level Output Voltage

VOH

High-level Output Voltage

IIL

Input Low Current

IIH

Input High Current

IOZ

3-state Output Leakage

Current

Min

0.7XVDD

2.4 V

2.4 V

2.4 V

-10 uA

-10 uA

-10 uA

Max

0.3XVDD

0.4 V

0.4 V

0.4 V

10 uA

10 uA

10 uA

Conditions

Guaranteed Input Low Voltage

Guaranteed Input High Voltage

IOL = 1 mA (*Group A)

IOL = 2 mA (Group B)

IOL = 4 mA (Group C)

IOH = -1 mA (Group A)

IOH = -2 mA (Group B)

IOH = -4 mA (Group C)

VIN-VSS

VIN=VDD

VPAD = VSS or

VDD

* : It means the drive strength (Group A = 1, Group B = 2, Group C = 4)

Refer to GPIO part (page 122)

I/O Circuit Pull-up Pin

The following current values are used for I/Os with internal pull-up devices.

Symbol

IPU

Parameter

Pull-up

Min(VIN = VSS)

-100 uA

Max(VIN = VDD)

- 4 uA

Note : The following pins are used with internal pull-up devices.

TDI, TCK, TMS, PMADAOK, PMBATOK, nTEST, nPMWAKEUP

I/O Circuit Pull-down Pin

The following current values are used for I/Os with internal pull-down devices.

Symbol

IPD

Parameter

Pull-down

Min(VIN = VSS)

4 uA

Max(VIN = VDD)

100 uA

Note : The following pins are used with internal pull-down devices.

nTRST, TESTSCAN, nPLLENABLE, SCAN_EN

© 2004 MagnaChip Semiconductor Ltd. All R1ig62hts Reserved.

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