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HMS30C7202N Просмотр технического описания (PDF) - MagnaChip Semiconductor

Номер в каталоге
Компоненты Описание
производитель
HMS30C7202N
Magnachip
MagnaChip Semiconductor Magnachip
HMS30C7202N Datasheet PDF : 179 Pages
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HMS30C7202N
12 ELECTRICAL CHARACTERISTICS
12.1 Absolute Maximum Ratings
Symbol
VDD
VIN
IIN
TSTG
Parameter
Power Supply Voltage
DC Input Voltage
DC Input Current
Storage Temperature
Min
Max
Units
-0.5
4.6
V
-0.3
6
V
-50
50
mA
-65
150
°C
Note : Permanent damage can be occur if maximum ratings are exceeded.
Device modules may not operate normally while being exposed to electrical
extremes.
Although sections of the device contain circuitry to protect against damages
from high static voltages or electrical fields, take normal pre-cautions to avoid
exposure to voltages higher than maximum rated voltages.
Recommended Operating Range
Symbol
Parameter
Min
VDD (3.3V) DC Power Supply Voltage (3.3V) 3.0
Æ use for I/O
2.3
VDD (2.5V) DC Power Supply Voltage (2.5V) -40
Æ use for a Core
TOPR
Operating Temperature
(Industrial Temperature)
Max Units
3.6
V
2.7
V
85
°C
© 2004 MagnaChip Semiconductor Ltd. All R1ig61hts Reserved.
- 161 -
Version 1.1

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