14N37GVL Просмотр технического описания (PDF) - Fairchild Semiconductor
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14N37GVL Datasheet PDF : 6 Pages
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HGT1S14N37G3VLS, HGTP14N37G3VL
Typical Performance Curves Unless Otherwise Specified (Continued)
28
VGE = 5V
24
20
16
12
8
4
0
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (oC)
FIGURE 11. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
2.0
ICE = 1mA
1.8
VCE = VGE
1.6
1.4
1.2
1.0
0.8
-50
25
100
175
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 12. THRESHOLD VOLTAGE vs JUNCTION
TEMPERATURE
10000
1000
VECS = 24V
100
VCES = 300V
10
1
VCES = 250V
0.1
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 13. LEAKAGE CURRENT vs JUNCTION
TEMPERATURE
16
ICE = 6.5A, VGE = 5V, RG = 1kΩ
14
RESISTIVE tOFF
12
10
INDUCTIVE tOFF
8
6
RESISTIVE tON
4
2
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 14. SWITCHING TIME vs JUNCTION TEMPERATURE
2400
2000
FREQUENCY = 1MHz
1600
1200
CIES
800
400
0
0
CRES
COES
5
10
15
20
25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
8
IG(REF) = 1mA, RL = 1.865Ω, TJ = 25oC
6
VCE = 12V
4
2
VCE = 6V
0
0
8
16
24
32
40
48
56
QG, GATE CHARGE (nC)
FIGURE 16. GATE CHARGE WAVEFORMS
©2001 Fairchild Semiconductor Corporation
HGT1S14N37G3VLS, HGTP14N37G3VL Rev. B
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