HGT1S14N37G3VLS, HGTP14N37G3VL
Typical Performance Curves Unless Otherwise Specified (Continued)
360
TJ (oC)
350
-55
25
150
340
175
330
320
0
2
4
6
8
RG, GATE SERIES RESISTANCE (kΩ)
FIGURE 17. BREAKDOWN VOLTAGE vs SERIES GATE RESISTANCE
ICER = 10mA
10
100
0.5
0.2
10-1 0.1
0.05
0.02
0.01
10-2
SINGLE PULSE
10-5
10-4
t1
PD
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
t2
10-3
10-2
10-1
100
t1, RECTANGULAR PULSE DURATION (s)
FIGURE 18. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuits
3mH
PULSE
GEN
RG
G
C
DUT
E
VDD
FIGURE 19. INDUCTIVE SWITCHING TEST CIRCUIT
©2001 Fairchild Semiconductor Corporation
RG = 1kΩ G
5V
R
or LOAD
L
C
DUT
+
VDD
-
E
FIGURE 20. tON AND tOFF SWITCHING TEST CIRCUIT
HGT1S14N37G3VLS, HGTP14N37G3VL Rev. B