14N37GVL Просмотр технического описания (PDF) - Fairchild Semiconductor
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14N37GVL Datasheet PDF : 6 Pages
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HGT1S14N37G3VLS, HGTP14N37G3VL
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Collector to Emitter Breakdown Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCER
Emitter to Collector Breakdown Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVECS
Collector Current Continuous at VGE = 5V, TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
at VGE = 5V, TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . IC110
Gate to Emitter Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Inductive Switching Current at L = 3mH, TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISCIS
at L = 3mH, T
C = 150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . ISCIS
Collector to Emitter Avalanche Energy at L = 3 mH, TC = 25oC . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG
Operating Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ
Electrostatic Voltage HBM at 250pF, 1500Ω All Pin Configurations. . . . . . . . . . . . . . . . . . ESD
Electrostatic Voltage MM at 200pF, 0Ω All Pin Configurations. . . . . . . . . . . . . . . . . . . . . . ESD
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG
HGT1S14N37G3VLS,
HGTP14N37G3VL
380
24
25
18
±10
15
11.5
340
136
0.91
-55 to 175
-55 to 175
5
2
300
260
UNITS
V
V
A
A
V
A
A
mJ
W
W/oC
oC
oC
kV
kV
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. May be exceeded if IGEM is limited to 10mA.
Electrical Specifications TJ = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to Emitter Breakdown Voltage
Gate to Emitter Plateau Voltage
Gate Charge
BVCER
VGEP
QG(ON)
IC
TJ
=
=
10mA,
-55oC
tRoG17=51okCΩ(,FVigGuEre=106V) ,
IC = 6.5A, VCE = 12V
IC = 6.5A, VCE = 12V, VGE = 5V
(Figure 16)
Collector to Emitter Clamp Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Emitter to Collector Leakage Current
Collector to Emitter On-State Voltage
Gate to Emitter Threshold Voltage
Gate Series Resistance
Gate to Emitter Resistance
Gate to Emitter Leakage Current
BVCE(CL)
BVECS
ICES
IECS
VCE(ON)
VGE(TH)
R1
R2
IGES
IC = 15A, RG = 1kΩ
IC = 10mA
VCE = 300V, VGE = 0V
(Figure 13)
VCE = 250V,
VGE = 0V (Figure 13)
VEC = -24V,
VGE = 0V (Figure 13)
IC = 6A, VGE = 4.0V
(Figures 3 through 9)
IC = 10A, VGE = 4.5V
(Figures 3 through 9)
IC = 14A, VGE = 5V
(Figures 3 through 9)
TJ = 25oC
TJ = 175oC
TJ = 25oC
TJ = 175oC
TJ = 25oC
TJ = 175oC
TJ = -55oC
TJ = 25oC
TJ = 25oC
TJ = 175oC
TJ = 25oC
TJ = 175oC
IC = 1mA, VCE = VGE (Figure 12)
VGE = ±10V
MIN
320
-
-
320
24
-
-
-
-
-
-
-
-
-
-
-
-
1.3
-
10
±310
TYP
350
2.76
27
350
28
-
-
-
-
-
-
1.3
1.25
1.45
1.5
1.6
1.7
1.8
70
18
±500
MAX
380
-
-
380
-
40
250
10
75
10
50
1.45
1.6
1.75
1.9
2
2.3
2.2
150
26
±1000
UNITS
V
V
nC
V
V
µA
µA
µA
µA
mA
mA
V
V
V
V
V
V
V
Ω
kΩ
µA
©2001 Fairchild Semiconductor Corporation
HGT1S14N37G3VLS, HGTP14N37G3VL Rev. B
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