CXG1130AER Просмотр технического описания (PDF) - Sony Semiconductor
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CXG1130AER Datasheet PDF : 8 Pages
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CXG1130AER
Example of Representative Characteristics
1. CXG1130AER frequency characteristics of main items in LNA block (25°C)
[Condition] VDD = 3V, 800MHz_L (Pin 9 input → Pin 13 output): VCTL1 = 0V, VCTL2 = 0V,
800MHz_U (Pin 12 input → Pin 13 output): VCTL1 = 3V, VCTL2 = 0V,
1500MHz (Pin 7 input → Pin 6 output): VCTL2 = 3V
Gp and NF are those when a small signal is input. The input IP3 is converted from the IM3 suppression
ratio for two-wave input: fRFoffset = 100kHz, PRF = –30dBm.
Power gain Gp
19
Power gain Gp
19
18
18
800MHz (U)
17
17
16
800MHz (L)
16
15
15
1500MHz
14
780 800 820 840 860 880 900 920
f [MHz]
Noise figure NF
2.5
2.0
1.5
1.0
800MHz (L)
800MHz (U)
0.5
0
780 800 820 840 860 880 900 920
f [MHz]
Input IP3
–2
14
1440
2.5
1460
1480 1500
f [MHz]
Noise figure NF
1520
1540
2.0
1500MHz
1.5
1.0
0.5
0
1440
–2
1460
1480 1500
f [MHz]
Input IP3
1520
1540
–4
–4
800MHz (U)
1500MHz
–6
–6
–8
–8
800MHz (L)
–10
–10
–12
780 800 820 840 860 880 900 920
f [MHz]
–12
1440
–5–
1460
1480 1500
f [MHz]
1520
1540
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