CXG1130AER Просмотр технического описания (PDF) - Sony Semiconductor
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CXG1130AER Datasheet PDF : 8 Pages
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CXG1130AER
Electrical Characteristics
The normalized values are those when the Sony’s recommended evaluation board is used.
800MHz Band Low Noise Amplifier
Conditions: Unless otherwise specified, VDD = 3.0V, VCTL (H) = 3.0V, VCTL (L) = 0V, fRF1 = 885MHz, fRF2 = 810MHz
(Ta = 25°C)
Item
Symbol
Path
Frequency VCTL1 VCTL2 Min.
Typ.
Max.
Unit
Measurement
condition
Current
consumption IDD
—
Control current ICTL1
—
—
H L — 2.0 2.65
mA
—
L L — 2.0 2.65
When no
—
H L — 60 90
signal
µA
—
L L –5
0
5
Power gain
RFIN1 → RFOUT1 fRF1
Gp
RFIN2 → RFOUT1 fRF2
H L 14.5 16.5 18.5
L L — –20 –15
dB
H L — –25 –20
When a
L L 14.5 16.5 18.5
small signal
Noise figure
RFIN1 → RFOUT1 fRF1
NF
RFIN2 → RFOUT1 fRF2
HL
LL
— 1.3 2.0
dB
— 1.5 2.0
Input IP3
RFIN1 → RFOUT1
IIP3
RFIN2 → RFOUT1
fRF1
fRF2
H
L
–10 –6.5 — dBm ∗1
L L –11 –8 —
Isolation
RFOUT1 → RFIN1 fRF1
ISO
RFOUT1 → RFIN2 fRF2
HL
LL
22
18
26
22
—
—
dB
When a
small signal
∗1 Conversion from the IM3 suppression ratio for two-wave input: fRFoffset = 100kHz, PRF = –30dBm.
1.5GHz Band Low Noise Amplifier
Conditions: Unless otherwise specified, VDD = 3.0V, VCTL (H) = 3.0V, VCTL (L) = 0V, fRF3 = 1490MHz
(Ta = 25°C)
Item
Symbol
Path
Frequency VCTL1 VCTL2 Min.
Typ.
Max.
Unit
Measurement
condition
Current
consumption
IDD
—
Control current ICTL2
—
—
— H — 2.9 3.7 mA When no
signal
—
— H — 90 120 µA
Power gain
Noise figure
Input IP3
Gp RFIN3 → RFOUT2
NF RFIN3 → RFOUT2
IIP3 RFIN3 → RFOUT2
fRF3
fRF3
fRF3
— H 14 16 18 dB When a
— H — 1.6 2.1 dB small signal
—H
–9
–6
— dBm ∗1
Isolation
ISO RFOUT2 → RFIN3 fRF3
—H
20
23
—
dB
When a
small signal
∗1 Conversion from the IM3 suppression ratio for two-wave input: fRFoffset = 100kHz, PRF = –30dBm.
–3–
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