CXG1130AER Просмотр технического описания (PDF) - Sony Semiconductor
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CXG1130AER Datasheet PDF : 8 Pages
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CXG1130AER
Triple Low Noise Amplifier/Dual Mixer
Description
The CXG1130AER is a triple low noise amplifier/
dual mixer. This IC is designed using the Sony’s GaAs
J-FET process.
24 pin VQFN (Plastic)
Features
• Single 3V power supply operation
• 2-pin control by the on-chip logic circuit
• High gain:
Gp = 16.5dB (LNA typ.)
Gc = 10dB (MIX typ.)
• Low noise figure: NF = 1.5 to 1.6dB (LNA typ.)
NF = 4.5dB (MIX typ.)
• Low LO input power operation
• 24-pin VQFN small package
Applications
800MHz/1.5GHz Japan digital cellular phones (PDC)
Structure
GaAs J-FET MMIC
Absolute Maximum Ratings (Ta = 25°C)
• Supply voltage
VDD
4.5
V
• Input power
PIN
+13 dBm
• Current consumption IDD
15
mA
• Operating temperature Topr –35 to +85 °C
• Storage temperature Tstg –65 to +150 °C
Recommended Operating Conditions
• Supply voltage
VDD
2.7 to 3.3 V
• Control voltage
VCTL (H) 2.4 to 3.3 V
VCTL (L) 0 to 0.3 V
GaAs MMICs are ESD sensitive devices. Special handling precautions are required.
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E01827-PS
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