LRI512 Просмотр технического описания (PDF) - STMicroelectronics

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LRI512

Memory TAG IC 512 bit High Endurance EEPROM 13.56MHz, ISO 15693 Standard Compliant with E.A.S.

STMicroelectronics 

LRI512

Table 59. AC Characteristics

Symbol

Parameter

Test Condition (in addition to

those in Table 57)

Min.

Typ.

fCC

External RF Signal Frequency

13.553 13.56

MICARRIER 10% Carrier Modulation Index

MI=(A-B)/(A+B)

10

tRFR, tRFF 10% Rise and Fall time

0

tRFSBL

10% Minimum Pulse Width for

bit

7.1

MICARRIER 100% Carrier Modulation Index

MI=(A-B)/(A+B)

95

tRFR, tRFF 100% Rise and Fall time

0

tRFSBL

100% Minimum Pulse Width for

bit

7.1

tJIT

Bit pulse Jitter

-2

tMAX Maximum Carrier Rise Time

Zero to Maximum field strength

induced Voltage on Coil

tMINCD

Minimum Time from Carrier

Generation to First Data

From H-field min

0.1

fSH

Subcarrier Frequency High

FCC/32

423.75

fSL

Subcarrier Frequency Low

FCC/28

484.28

t1

Time for LRI512 Response

4224/FS

313

320.9

t2

Time between Commands

4224/FS

309

311.5

rL

Resistive Load (for Modulation)

500

1000

A1T/ISOR

0.15

PA

H-field Energy on LRI512

Antenna

A1S/ISOR

0.15

A2T/ISOK

0.15

C40

1

tW

Programming Time

Note: 1. PA Min is the minimum H-field required to communicate with the LRI512

PA Max is the maximum H-field that the device can support before clamping the incoming signal

Max. Unit

13.567 MHz

30

%

3.0

µs

9.44 µs

100

%

3.5

µs

9.44 µs

+2

µs

3

V/µs

1

ms

kHz

kHz

322

µs

314

µs

2000 Ω

5

A/m

5

A/m

5

A/m

5

A/m

5

ms

47/54

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