LRI512 Просмотр технического описания (PDF) - STMicroelectronics

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LRI512

Memory TAG IC 512 bit High Endurance EEPROM 13.56MHz, ISO 15693 Standard Compliant with E.A.S.

STMicroelectronics 

LRI512

MAXIMUM RATING

Stressing the device above the rating listed in the

Absolute Maximum Ratings table may cause per-

manent damage to the device. These are stress

ratings only and operation of the device at these or

any other conditions above those indicated in the

Operating sections of this specification is not im-

plied. Exposure to Absolute Maximum Rating con-

ditions for extended periods may affect device

reliability. Refer also to the STMicroelectronics

SURE Program and other relevant quality docu-

ments.

Table 56. Absolute Maximum Ratings

Symbol

Parameter

W4

SB

TSTG

Storage Temperature

A1T/ISOR

A1S/ISOR

A2T/ISOK

C40

VMAX

Maximum Input Voltage on AC0 / AC1

A1T/ISOR

VESD

Electrostatic Discharge

Voltage2

A1S/ISOR

A2T/ISOK

C40

Note: 1. IPC/JEDEC J-STD-020A

2. ESD test: ISO10373-7 specification

Condition

Min. Max.

ST antistatic bag,

max 23 months

15

25

Mounted wafer in a wafer-

sawing box (8"),

15

25

max 25 wafers

40-60% RH, max 2 Years 15

25

Reels in shrink film and

packed in hexagonal

15

25

cardboard box

40% RH, max 1 year

15

25

Reels in ST cardboard box 15

25

–7

7

ISO 10373-7

–7000 7000

ISO 10373-7

–7000 7000

ISO 10373-7

–7000 7000

ISO 10373-7

–7000 7000

Unit

°C

°C

°C

°C

°C

°C

V

V

V

V

V

44/54

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