HMC283 Просмотр технического описания (PDF) - Hittite Microwave

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HMC283

GaAs MMIC MEDIUM POWER AMPLIFIER, 17 - 40 GHz

Hittite Microwave 

v03.1007

Absolute Maximum Ratings

Drain Bias Voltage

(Vdd1, Vdd2, Vdd3, Vdd4)

Drain Bias Current (Idd)

Gate Bias Voltage

(Vgg1, Vgg2, Vgg3, Vgg4)

Gate Bias Current (Igg)

RF Input Power (RFIN)(Vdd = +3.5 Vdc)

Channel Temperature

Continuous Pdiss (T = 85 °C)

(derate 13.04 mW/°C above 85 °C)

Thermal Resistance

(channel to die bottom)

Storage Temperature

Operating Temperature

+5Vdc

400 mA

-2 to +0.4Vdc

4 mA

+8 dBm

175 °C

1.174 W

76.7 °C/W

-65 to +150 °C

-55 to +85 °C

Outline Drawing

HMC283

GaAs MMIC MEDIUM POWER

AMPLIFIER, 17 - 40 GHz

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

3

Die Packaging Information [1]

Standard

Alternate

GP-2

[2]

[1] Refer to the “Packaging Information” section for die

packaging dimensions.

[2] For alternate packaging information contact Hittite

Microwave Corporation.

NOTES:

1. ALL DIMENSIONS ARE IN INCHES [MM]

2. DIE THICKNESS IS .004”

3. TYPICAL BOND IS .004” SQUARE

4. BACKSIDE METALLIZATION: GOLD

5. BOND PAD METALLIZATION: GOLD

6. BACKSIDE METAL IS GROUND.

7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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