DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

HMC283 Просмотр технического описания (PDF) - Hittite Microwave

Номер в каталоге
Компоненты Описание
производитель
HMC283 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
3
Pin Descriptions
Pin Number
Function
1
RFIN
2
Vdd1
3, 10
Vgg2
4, 5
Vdd2, 3. 4
6
RFOUT
V
7
DET
8
Vgg4
9
Vgg3
11
Vgg1
v03.1007
HMC283
GaAs MMIC MEDIUM POWER
AMPLIFIER, 17 - 40 GHz
Pin Description
This pad is AC coupled and matched to 50 Ohms.
Power Supply Voltage for the amplifier. External bypass caps
of 100pF and 0.1 μF are required.
Gate Control for amplifier. Adjust Vgg ( = Vgg1, Vgg2, Vgg3,
Vgg4) to acheive Idd = 300mA. External bypass caps of
100pF and 0.1 μF are required.
Power Supply Voltage for the amplifier. External bypass caps
of 100pF and 0.1 μF are required.
This pad is AC coupled and matched to 50 Ohms.
Output power verification pad.
Gate Control for amplifier. Adjust Vgg ( = Vgg1, Vgg2, Vgg3,
Vgg4) to acheive Idd = 300mA. External bypass caps of
100pF and 0.1 μF are required.
Gate Control for amplifier. Adjust Vgg ( = Vgg1, Vgg2, Vgg3,
Vgg4) to acheive Idd = 300mA. External bypass caps of
100pF and 0.1 μF are required.
Gate Control for amplifier. Adjust Vgg ( = Vgg1, Vgg2, Vgg3,
Vgg4) to acheive Idd = 300mA. External bypass caps of
100pF and 0.1 μF are required.
Interface Schematic
3-6
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]