SI4431CDY Просмотр технического описания (PDF) - Unspecified
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SI4431CDY Datasheet PDF : 4 Pages
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Si4431CDY
Electrical Characteristics：(TC=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
Off Characteristics
BVDSS
IDSS
IGSS
On Characteristics3
Drain-Sourtce Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
VGS=0V,ID=250μA
-30
VGS=0V, VDS=-30V, TJ=25℃ ---
VGS=±20V, VDS=0A
---
-33
---
V
---
-1
μA
--- ±100 nA
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
-1.3 -1.65 -2.5
V
RDS(ON)
Drain-Source On Resistance2
VGS=-10V,ID=-6.5A
VGS=-4.5V,ID=-5A
---
30
35
mΩ
---
53
65
GFS
Forward Transconductance
Dynamic Characteristics4
VDS=-5V, ID=-6.5A
14
---
---
S
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics,4
---
660
---
VDS=-15V, VGS=0V, f=1MHz ---
100
---
pF
---
65
---
td(on)
Turn-On Delay Time
tr
td(off)
Rise Time
Turn-Off Delay Time
VDS=-15V, VGS=-10V
ID=-4A,RGEN=3Ω
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain “Miller” Charge
VDS=-15V , VGS=-10V ,
ID=-6.5A
Drain-Source Diode Characteristics
VSD
LS
Notes:
Source-Drain Diode Forward Voltage3 VGS=0V,IS=-8A, TJ=25℃
Diode Forward Current2
---
---
7.5
---
ns
---
5.5
---
ns
---
19
---
ns
---
7
---
ns
---
9.2
---
nC
---
1.6
---
nC
---
2.2
---
nC
---
---
-1.2
V
---
-8
A
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
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