SI4431CDY Просмотр технического описания (PDF) - Unspecified

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SI4431CDY

P-Channel MOSFET uses advanced trench technology

Unspecified 

Description：

This P-Channel MOSFET uses advanced trench technology and

design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

Features：

1) VDS=-30V,ID=-8A,RDS(ON)<35mΩ@VGS=-10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra RDS(ON).

5) Excellent package for good heat dissipation.

Si4431CDY

S1

S

S

G

D

D

D

D

Absolute Maximum Ratings：(TC=25℃ unless otherwise noted)

Symbol

VDS

VGS

ID

PD

TJ, TSTG

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current-TC=25℃

Pulsed Drain Current1

Power Dissipation

Operating and Storage Junction Temperature Range

Ratings

-30

±20

-8

-30

3.1

-55 to +150

Thermal Characteristics：

Symbol

Parameter

Max

RƟJA

Thermal Resistance,Junction to Ambient2

40

Units

V

V

A

W

℃

Units

℃/ W

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