SI4401DDY Просмотр технического описания (PDF) - Unspecified

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SI4401DDY

P-Channel MOSFET uses advanced trench technology

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Si4401DDY

LS

LSM

Continuous Source Current

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VG=VD=0V , Force Current

Notes:

1. Repetitive Rating : Pulsed width limited by maximum junction temperature.

2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.

3. Essentially independent of operating temperature.

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Typical Characteristics： (TC=25℃ unless otherwise noted)

TC , Case Temperature (℃)

Fig.1 Continuous Drain Current vs. TC

TJ , Junction Temperature (℃)

Fig.2 Normalized RDSON vs. TJ

TJ , Junction Temperature (℃)

Fig.3 Normalized Vth vs. TJ

Qg , Gate Charge (nC)

Fig.4 Gate Charge Waveform

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