SI4401DDY Просмотр технического описания (PDF) - Unspecified

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SI4401DDY

P-Channel MOSFET uses advanced trench technology

Unspecified 

Description：

This P-Channel MOSFET uses advanced trench technology and

design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

Features：

1) VDS=-40V,ID=-10A,RDS(ON)<15mΩ@VGS=-10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra RDS(ON).

5) Excellent package for good heat dissipation.

Si4401DDY

S1

S

S

G

D

D

D

D

Absolute Maximum Ratings：(TC=25℃ unless otherwise noted)

Symbol

VDS

VGS

ID

EAS

PD

TJ, TSTG

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current-TC=25℃

Continuous Drain Current-TC=100℃

Pulsed Drain Current1

Single Pulse Avalanche Energy

Power Dissipation

Operating and Storage Junction Temperature Range

Ratings

-40

±20

-10

-6.3

-40

---

4.2

-55 to +150

Thermal Characteristics：

Symbol

Parameter

Max

RƟJC

Thermal Resistance,Junction to Case

30

RƟJA Thermal Resistance,Junction to Ambient

60

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—1—

Units

V

V

A

mJ

W

℃

Units

℃/W

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