Si4401DDY
Electrical Characteristics:(TC=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Off Characteristics
BVDSS
IDSS
IGSS
On Characteristics
Drain-Sourtce Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
VGS=0V,ID=250μA
-40
VGS=0V, VDS=-40V, TJ=25℃ ---
VGS=±20V, VDS=0A
---
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
-1.0
VGS=-10V,ID=-10A
---
RDS(ON)
Drain-Source On Resistance2
VGS=-4.5V,ID=-8A
---
GFS
Forward Transconductance
VDS=-10V, ID=-10A
---
Dynamic Characteristics
Ciss
Input Capacitance
---
Coss
Output Capacitance
VDS=-25V, VGS=0V, f=1MHz ---
Crss
Reverse Transfer Capacitance
---
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time2,3
Rise Time2,3
Turn-Off Delay Time2,3
Fall Time2,3
Total Gate Charge2,3
Gate-Source Charge2,3
Gate-Drain “Miller” Charge2,3
---
VDS=-20V, VGS=-10V
---
ID=-1A,RGEN=6Ω
---
---
---
VDS=-32V , VGS=-4.5V ,
---
ID=-10A
---
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage2 VGS=0V,IS=-1A, TJ=25℃
---
Typ Max Units
---
---
V
---
-1
μA
--- ±100 nA
-1.6 -2.5
V
11.5 15
mΩ
16
22
13
---
S
2757 4000
240 360
pF
137 200
23
40
ns
10
20
ns
135 250
ns
46
90
ns
22.2 40
nC
8.2
16
nC
8.8
16
nC
---
-1
V
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