SM3016NSU
®
Electrical
Characteristics
(Cont.)
(T
A
=
25°C
unless
otherwise
noted)
Symbol
Parameter
Test Conditions
Diode Characteristics
VSD b Diode Forward Voltage
trr Reverse Recovery Time
ISD=20A, VGS=0V
ta Charge Time
tb Discharge Time
Qrr Reverse Recovery Charge
Dynamic Characteristics c
IF=20A, dlSD/dt=100A/µs
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics c
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=15V,
Frequency=1.0MHz
VDD=15V, RL=15Ω,
IDS=1A, VGEN=10V,
RG=6Ω
Qg Total Gate Charge
VDS=15V, VGS=4.5V,
ID S= 30A
Qg Total Gate Charge
Qgth Threshold Gate Charge
Qgs Gate-Source Charge
VDS=15V, VGS=10V,
ID S= 30A
Qgd Gate-Drain Charge
Note b :Pulse test ; pulse width≤300µs, duty cycle≤2%.
Note c :Guaranteed by design, not subject to production testing.
Min.
-
-
-
-
-
2.1
1344
175
96
-
-
-
-
-
-
-
-
-
Typ.
0.8
14
7.5
6.5
6
2.6
1680
250
160
14
11
51
17
14
31
1.4
2.8
8
Max.
1.1
-
-
-
-
3.1
2016
325
224
21
16
75
25
20
43
2
3.9
11.2
Unit
V
ns
nC
Ω
pF
ns
nC
Copyright © Sinopower Semiconductor, Inc.
3
Rev. A.3 - January, 2015
www.sinopowersemi.com