SM3016NSUC-TRG Просмотр технического описания (PDF) - Unspecified

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Компоненты Описание

производитель

SM3016NSUC-TRG

N-Channel Enhancement Mode MOSFET

Unspecified 

SM3016NSU

®

Typical Operating Characteristics (Cont.)

Drain-Source On Resistance

2.0

V = 10V

GS

1.8 I = 30A

DS

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

R @T =25oC:

ON

j

4.1mΩ

-50 -25 0 25 50 75 100 125 150

Tj - Junction Temperature (°C)

Source-Drain Diode Forward

100

10

T =150oC

j

T =25oC

j

1

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

VSD - Source - Drain Voltage (V)

2400

2100

Capacitance

Frequency=1MHz

1800

Ciss

1500

1200

900

600

300

Crss

0

0

5

Coss

10 15 20 25 30

VDS - Drain-Source Voltage (V)

Gate Charge

10

V = 15V

9

DS

I = 30A

DS

8

7

6

5

4

3

2

1

0

0 4 8 12 16 20 24 28 32

QG - Gate Charge (nC)

Copyright © Sinopower Semiconductor, Inc.

6

Rev. A.3 - January, 2015

www.sinopowersemi.com

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