SM3016NSUC-TRG Просмотр технического описания (PDF) - Unspecified
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SM3016NSUC-TRG Datasheet PDF : 12 Pages
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SM3016NSU
®
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
IS Diode Continuous Forward Current
IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
RθJA Thermal Resistance-Junction to Ambient
IAS a Avalanche Current, Single pulse (L=0.5mH)
EAS a Avalanche Energy, Single pulse (L=0.5mH)
TC=25°C
TC=100°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Steady State
t ≤ 10s
Steady State
30
±20
150
-55 to 150
30
140
90
75
47
50
20
2.5
15
50
20
100
V
°C
°C
A
W
°C/W
A
mJ
Note a：UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Electrical Characteristics
(T
A
=
25°C
unless
otherwise
noted)
Symbol
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) b Drain-Source On-state Resistance
Gfs Forward Transconductance
Test Conditions
Min.
VGS=0V, IDS=250µA
30
VDS=24V, VGS=0V
-
TJ=85°C
-
VDS=VGS, IDS=250µA
1.5
VGS=±20V, VDS=0V
-
VGS=10V, IDS=30A
-
TJ=125°C -
VGS=4.5V, IDS=20A
-
VDS=5V, IDS=20A
-
Typ.
-
-
-
1.8
-
4.1
6.3
5.3
40
Max. Unit
-
V
1
µA
30
2.5 V
±10 µA
5
- mΩ
6.9
-
S
Copyright © Sinopower Semiconductor, Inc.
2
Rev. A.3 - January, 2015
www.sinopowersemi.com
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