MW7IC915NT1 Просмотр технического описания (PDF) - NXP Semiconductors.

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Компоненты Описание

производитель

MW7IC915NT1

RF LDMOS Wideband Integrated Power Amplifier

NXP Semiconductors. 

VDD = 28 Vdc, IDQ1 = 52 mA, IDQ2 = 134 mA, Pout = 1.6 W Avg.

f

Zin

MHz



Zload



820

52.99 -- j29.47

7.72 + j13.96

840

49.35 -- j27.56

7.34 + j14.74

860

46.67 -- j23.60

7.43 + j15.55

880

44.88 -- j17.63

7.94 + j16.07

900

43.73 -- j10.46

7.98 + j16.74

920

43.12 -- j2.75

7.80 + j17.62

940

43.38 + j5.01

8.28 + j18.33

960

44.07 + j12.97

9.07 + j19.04

980

43.89 + j12.61

9.14 + j20.02

Zin = Device input impedance as measured from

gate to ground.

Zload = Test circuit impedance as measured from

drain to ground.

Device

Under Test

Output

Matching

Network

Z in

Z load

Figure 11. Series Equivalent Input and Load Impedance

MW7IC915NT1

8

RF Device Data

Freescale Semiconductor, Inc.

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