MW7IC915NT1 Просмотр технического описания (PDF) - NXP Semiconductors.

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Компоненты Описание

производитель

MW7IC915NT1

RF LDMOS Wideband Integrated Power Amplifier

NXP Semiconductors. 

TYPICAL CHARACTERISTICS — 700 MHz

38.8

17.5

PAE

38.6

17

38.4

16.5

VDD = 28 Vdc

38.2 Pout = 1.6 W (Avg.), IDQ1 = 50 mA

16

IDQ2 = 144 mA, Single--Carrier W--CDMA, 3.84 MHz

38

Channel Bandwidth, Input Signal PAR = 7.5 dB @

0.01% Probability on CCDF

Gps

--49

--10

0.5

PARC

37.8

--50

--20

0

37.6

IRL

--51

--30

--0.5

ACPR

37.4

--52

--40

--1

710 720 730 740 750 760 770 780 790

f, FREQUENCY (MHz)

Figure 14. Output Peak--to--Average Ratio Compression (PARC)

Broadband Performance @ Pout = 1.6 Watts Avg.

41

90

--15

VDD = 28 Vdc, IDQ1 = 50 mA, IDQ2 = 144 mA, Single--Carrier

40 W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal

80

--20

PAR = 7.5 dB @ 0.01% Probability on CCDF

39

70

--25

38 Gps

728 MHz

37 768 MHz 748 MHz

36

748 MHz

728 MHz

60

--30

50

--35

748 MHz

40

--40

35

ACPR

34

768 MHz

PAE

768 MHz

30

--45

20

--50

33

10

--55

1

10

20

Pout, OUTPUT POWER (WATTS) AVG.

Figure 15. Single--Carrier W--CDMA Power Gain, Power Added

Efficiency and ACPR versus Output Power

40

0

Gain

30

--10

20

--20

10

--30

0

--10

300

VDD = 28 Vdc

Pin = --30 dBm

IDQ1 = 50 mA

IDQ2 = 144 mA

600

IRL

900

--40

--50

1200

f, FREQUENCY (MHz)

Figure 16. Broadband Frequency Response

RF Device Data

Freescale Semiconductor, Inc.

MW7IC915NT1

11

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