MW7IC915NT1 Просмотр технического описания (PDF) - NXP Semiconductors.

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Компоненты Описание

производитель

MW7IC915NT1

RF LDMOS Wideband Integrated Power Amplifier

NXP Semiconductors. 

TYPICAL CHARACTERISTICS

41

90

--15

VDD = 28 Vdc, IDQ1 = 52 mA, IDQ2 = 134 mA, Single--Carrier

40 W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal

80

--20

PAR = 7.5 dB @ 0.01% Probability on CCDF

39

70

--25

895 MHz

38 Gps

895 MHz 880 MHz 865 MHz

37

60

--30

50

--35

36

880 MHz

895 MHz

35

ACPR

34

PAE

33

1

880 MHz 40

--40

865 MHz

30

--45

20

--50

10

--55

10

20

Pout, OUTPUT POWER (WATTS) AVG.

Figure 7. Single--Carrier W--CDMA Power Gain, Power Added

Efficiency and ACPR versus Output Power

40

0

Gain

30

--5

20

--10

10

--15

0

VDD = 28 Vdc

--20

Pin = --30 dBm

IRL

--10

IDQ1 = 52 mA

--25

IDQ2 = 134 mA

--20

300

600

--30

900

1200

f, FREQUENCY (MHz)

Figure 8. Broadband Frequency Response

W--CDMA TEST SIGNAL

100

10

1

Input Signal

0.1

0.01

W--CDMA. ACPR Measured in 3.84 MHz

0.001 Channel Bandwidth @ 5 MHz Offset.

Input Signal PAR = 7.5 dB @ 0.01%

0.0001 Probability on CCDF

0 1 2 3 4 5 6 7 8 9 10

PEAK--TO--AVERAGE (dB)

Figure 9. CCDF W--CDMA IQ Magnitude

Clipping, Single--Carrier Test Signal

RF Device Data

Freescale Semiconductor, Inc.

10

0

--10

3.84 MHz

--20

Channel BW

--30

--40

--50

--60 --ACPR in 3.84 MHz

Integrated BW

--70

+ACPR in 3.84 MHz

Integrated BW

--80

--90

--100

--9 --7.2 --5.4 --3.6 --1.8 0 1.8 3.6 5.4 7.2 9

f, FREQUENCY (MHz)

Figure 10. Single--Carrier W--CDMA Spectrum

MW7IC915NT1

7

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