MW7IC915NT1 Просмотр технического описания (PDF) - NXP Semiconductors.
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MW7IC915NT1 Datasheet PDF : 17 Pages
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Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 52 mA, IDQ2 = 134 mA, 865--895 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
(VDD = 28 Vdc, IDQ1 = 75 mA, IDQ2 = 100 mA)
P1dB
—
15.5
—
W
IMD Symmetry @ 16 W PEP, Pout where IMD Third Order
Intermodulation 30 dBc
IMDsym
MHz
—
45
—
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
180
—
MHz
Quiescent Current Accuracy over Temperature (1)
with 2 k Gate Feed Resistors (--30 to 85C)
Stage 1
IQT
—
0.10
—
%
Stage 2
—
0.12
—
Gain Flatness in 30 MHz Bandwidth @ Pout = 1.6 W Avg.
Gain Variation over Temperature
(--30C to +85C)
Output Power Variation over Temperature
(--30C to +85C)
GF
—
0.1
—
dB
G
—
0.041
—
dB/C
P1dB
—
0.004
—
dBm/C
Typical Performance — 700 MHz (In Freescale 700 MHz Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 50 mA, IDQ2 = 144 mA, Pout =
1.6 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in
3.84 MHz Channel Bandwidth @ 5 MHz Offset.
Frequency
Gps
(dB)
PAE
(%)
ACPR
(dBc)
IRL
(dB)
728 MHz
37.8
17.2
--49.5
--23
748 MHz
37.8
17.3
--50.5
--22
768 MHz
37.7
17.3
--51.4
--22
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or
AN1987.
MW7IC915NT1
4
RF Device Data
Freescale Semiconductor, Inc.
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