MW7IC915NT1 Просмотр технического описания (PDF) - NXP Semiconductors.

Номер в каталоге

Компоненты Описание

производитель

MW7IC915NT1

RF LDMOS Wideband Integrated Power Amplifier

NXP Semiconductors. 

Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Stage 1 — Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS = 65 Vdc, VGS = 0 Vdc)

Zero Gate Voltage Drain Leakage Current

(VDS = 28 Vdc, VGS = 0 Vdc)

Gate--Source Leakage Current

(VGS = 1.5 Vdc, VDS = 0 Vdc)

Stage 1 — On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 9 Adc)

Gate Quiescent Voltage

(VDS = 28 Vdc, ID = 52 mAdc)

Fixture Gate Quiescent Voltage

(VDD = 28 Vdc, ID = 52 mAdc, Measured in Functional Test)

Stage 2 — Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS = 65 Vdc, VGS = 0 Vdc)

Zero Gate Voltage Drain Leakage Current

(VDS = 28 Vdc, VGS = 0 Vdc)

Gate--Source Leakage Current

(VGS = 1.5 Vdc, VDS = 0 Vdc)

IDSS

—

—

10

Adc

IDSS

—

—

1

Adc

IGSS

—

—

1

Adc

VGS(th)

1

2

3

Vdc

VGS(Q)

—

3

—

Vdc

VGG(Q)

5.5

6.3

7

Vdc

IDSS

—

—

10

Adc

IDSS

—

—

1

Adc

IGSS

—

—

1

Adc

Stage 2 — On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 36 Adc)

VGS(th)

1

2

3

Vdc

Gate Quiescent Voltage

(VDS = 28 Vdc, ID = 134 mAdc)

VGS(Q)

—

2.9

—

Vdc

Fixture Gate Quiescent Voltage

(VDD = 28 Vdc, ID = 134 mAdc, Measured in Functional Test)

VGG(Q)

3.8

4.6

5.3

Vdc

Drain--Source On--Voltage

(VGS = 10 Vdc, ID = 3.6 Adc)

VDS(on)

0.1

0.3

0.8

Vdc

Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 52 mA, IDQ2 = 134 mA, Pout = 1.6 W Avg.,

f = 880 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured

in 3.84 MHz Channel Bandwidth @ 5 MHz Offset.

Power Gain

Gps

35.0

38.0

41.0

dB

Power Added Efficiency

PAE

15.0

17.4

—

%

Adjacent Channel Power Ratio

ACPR

—

--50.6

--47.0

dBc

Input Return Loss

IRL

—

--22

--9

dB

Typical Performance over Frequency (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 52 mA, IDQ2 = 134 mA, Pout = 1.6 W

Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in

3.84 MHz Channel Bandwidth @ 5 MHz Offset.

Frequency

Gps

(dB)

PAE

ACPR

IRL

(%)

(dBc)

(dB)

865 MHz

37.9

17.1

--50.4

--21

880 MHz

38.0

17.4

--50.6

--22

895 MHz

37.8

17.5

--51.3

--22

1. Part internally input matched.

(continued)

RF Device Data

Freescale Semiconductor, Inc.

MW7IC915NT1

3

Share Link: