2SC2373 Просмотр технического описания (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
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2SC2373 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 0.5A
ICBO
Collector Cutoff Current
VCB= 150V ; IE=0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 5A ; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 0.1A; VCE= 5V; ftest= 3MHz
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
VCC= 20V, IB1= -IB2= 0.6A,
PW= 20μs
hFE Classifications
M
L
K
15-35 25-45 35-70
2SC2373
MIN MAX UNIT
100
V
7
V
1.5
V
1.5
V
10
μA
10
μA
15
70
5
MHz
1.0
μs
2.5
μs
1.0
μs
SPTECH website：www.superic-tech.com
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