2SC2373 Просмотр технического описания (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

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производитель

2SC2373

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 100V(Min)

·Low Collector-Emitter Saturation Voltage-

: VCE(sat)= 1.5V(Max)@ IC= 5A, IB= 0.5A

·Fast Switching Speed

APPLICATIONS

·Designed for use in horizontal deflection output for B/W TV

applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO Collector-Base Voltage

200

V

VCEO Collector-Emitter Voltage

100

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

7

A

ICM

Collector Current-Peak

15

A

IB

Base Current-Continuous

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

3

A

40

W

150

℃

Tstg

Storage Temperature Range

-55~150 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance, Junction to Case

MAX UNIT

3.125 ℃/W

SPTECH website：www.superic-tech.com

2SC2373

1

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