TSAL5100 Просмотр технического описания (PDF) - Vishay Semiconductors
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TSAL5100 Datasheet PDF : 5 Pages
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TSAL5100
High Power Infrared Emitting Diode, Vishay Semiconductors
940 nm, GaAlAs/GaAs
180
160
140
120
100
80 RthJA = 230 K/W
60
40
20
0
0 10 20 30 40 50 60 70 80 90 100
21211
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
120
100
80
RthJA = 230 K/W
60
40
20
0
0
21212
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (°C)
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
Forward voltage
Temperature coefficient of VF
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of φe
Angle of half intensity
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µs
IF = 1 mA
VR = 5 V
VR = 0 V, f = 1 MHz, E = 0
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µs
IF = 100 mA, tp = 20 ms
IF = 20 mA
Peak wavelength
Spectral bandwidth
Temperature coefficient of λp
Rise time
Fall time
Virtual source diameter
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 100 mA
method: 63 % encircled energy
Note
Tamb = 25 °C, unless otherwise specified
SYMBOL
VF
VF
TKVF
IR
Cj
Ie
Ie
φe
TKφe
ϕ
λp
Δλ
TKλp
tr
tf
d
MIN.
80
650
TYP.
1.35
2.6
- 1.8
25
130
1000
35
- 0.6
± 10
940
50
0.2
800
800
3.7
MAX.
1.6
3
10
400
UNIT
V
V
mV/K
µA
pF
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
mm
Document Number: 81007
Rev. 1.6, 29-Jun-09
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
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