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Компоненты Описание
TSAL5100 Просмотр технического описания (PDF) - Vishay Semiconductors
Номер в каталоге
Компоненты Описание
производитель
TSAL5100
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
Vishay Semiconductors
TSAL5100 Datasheet PDF : 5 Pages
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TSAL5100
High Power Infrared Emitting Diode,
Vishay Semiconductors
940 nm, GaAlAs/GaAs
0° 10° 20°
30°
40°
1.0
0.9
50°
0.
8
60°
0.7
70°
8
0°
0.6 0.4 0.2 0
159
8
9
Fig. 9 - Relative Radiant Intensity vs. Angular Displacement
PACKAGE DIMENSIONS
in millimeters
A
C
R 2.49 (sphere)
1.1 ± 0.25
Area not plane
Ø 5 ± 0.15
0.5
+ 0.15
- 0.05
2.54 nom.
0.5
+ 0.15
- 0.05
6.544-525
8
.0
8
-4
Iss
u
e: 4; 19.05.09
14435
Document Number: 81007
Rev. 1.6, 29-Jun-09
For technical questions, contact:
emittertechsupport@vishay.com
technical dra
w
ings
according to DI
N
specifications
www.vishay.com
4
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