DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

MBR10100 Просмотр технического описания (PDF) - Yea Shin Technology Co., Ltd

Номер в каталоге
Компоненты Описание
производитель
MBR10100
YEASHIN
Yea Shin Technology Co., Ltd YEASHIN
MBR10100 Datasheet PDF : 3 Pages
1 2 3
DEVICE CHARACTERISTICS
MBR1020~MBR10200
10.0
0
150
CASE TEMPERATURE, OC
40
40V
20,30V
10
8
6
4
50,60V
80,100V
150V
200V
2
1.0
.8
.6
.4
TJ = 25OC
.2
Pulse Width = 300ms
1% Duty Cycle
.1
.4 .5 .6 .7 .8 .9 1.0 1.1
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
Fig.1- FORWARD CURRENT DERATING CURVE
Fig.2- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTIC
100
TC = 100OC
10
TC = 75OC
1.0
TC = 25OC
0.1
0.01
0
100 200 300
PERCENT OF PEAK REVERSE VOLTAGE
Fig.3- TYPICAL REVERSE CHARACTERISTIC
150
120
110
90
70
50
30
20
10
1
8.3ms Single
Half Since-Wave
JEDEC Method
2
5
10
20
50 100
NO. OF CYCLE AT 60HZ
Fig.4- MAXIMUM NON-REPETITIVE SURGE CURRENT
http://www.yeashin.com
400
350
300
250
TJ = 25OC
20-40V
200
150
150-200V
50-100V
0
12
5 10 20 50 100 200 500
REVERSE VOLTAGE, VOLTS
Fig.5- TYPICAL JUNCTION CAPACITANCE
2
REV.02 20150105

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]