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MBR10100 Просмотр технического описания (PDF) - Yea Shin Technology Co., Ltd

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Компоненты Описание
производитель
MBR10100
YEASHIN
Yea Shin Technology Co., Ltd YEASHIN
MBR10100 Datasheet PDF : 3 Pages
1 2 3
SEMICONDUCTOR
DATA SHEET
MBR1020~MBR10200
10A SCHOTTKY BARRIE R RECTIFIER
FEATURES
Schottky Barrier Chip
Guard Ring for Transient Protection
High Current Capability, Low Forward
Low Reverse Leakage Current
High Surge Current Capability
Plastic Material has UL Flammability
Classification 94V-O
High temperature soldering : 260OC / 10 seconds at terminals
Pb free product at available : 99% Sn above meet RoHS
environment substance directive request
TO-220AC
MECHANICAL DATA
Case: TO-220AC Molded Plastic
Terminals: Plated Leads Solderableper
MIL-STD-750, Method 2026
Polarity: As Marked on Body
Weight: 2.24 grams (approx.)
Mounting Position: Any
Marking: Type Number
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Unit:inch(mm)
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
See Fig. 1
Peak Repetitive Forward Current (Square Wave,
20KHz) at Tc=135oC
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
Peak Repetitive Reverse Surge Current (Note 1)
Voltage Rate of Change (Rated VR)
Maximum Instantaneous Forward Voltage at
(Note 2)
IF=10A, Tc=25OC
Symbol
VRRM
VRMS
VDC
I(AV)
IFRM
IFSM
IRRM
dV/dt
VF
MBR
1020
20
14
20
MBR
1030
30
21
30
1
0.55
MBR
1040
40
28
40
0.70
MBR
1050
50
35
50
MBR
1060
60
42
60
MBR MBR
1080 10100
80 100
56 70
80 100
MBR
10150
150
105
150
MBR
10200
200
140
200
Units
V
V
V
10
A
20.0
A
150
A
0.5
A
10,000
V/uS
0.75
0.85
0.95 0.99
V
Maximum Instantaneous Reverse Current
@ Tc =25 at Rated DC Blocking Voltage (Note 2)
@ Tc=125
IR
Typical Junction Capacitance (Note 3)
Cj
Maximum Thermal Resistance, Junction to Case
Operating Junction Temperature Range
Storage Temperature Range
RθJC
TJ
TSTG
Notes: 1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Mounted on Heatsink Size of 2 in x 3 in x 0.25in Al-Plate.
0.1
15.0
350
0.1
6.0
280
3.5
-55 to +150
-55 to +150
0.025
mA
10
mA
200
pF
2.0
/W
http://www.yeashin.com
1
REV.02 20150105

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