2SC3092 Просмотр технического описания (PDF) - New Jersey Semiconductor
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2SC3092 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
2SC3092
ELECTRICAL CHARACTERISTICS
Tc=25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage lc= 5mA;RBE °°
500
V
VcEO(SUS)
Collector-Emitter Sustaining Voltage
IC=7A;IB= 1.4A; L = 5 0 u H
500
V
V(BR)CBO
Collector-Base Breakdown Voltage
lc= 1mA; I E = 0
800
V
V(BR)EBQ
Emitter-Base Breakdown Voltage
IE= 1mA; lc= 0
7
V
VcE(sat)
Collector-Emitter Saturation Voltage
lc= 3A; IB= 0.6A
VBE(sat)
Base-Emitter Saturation Voltage
lc= 3A; IB= 0.6A
ICBO
Collector Cutoff Current
VCB= 500V; IE=0
1.0
V
1.5
V
10
uA
IEBO
Emitter Cutoff Current
VEB= 5V; lc=0
10
uA
hpE-1
DC Current Gain
lc= 0.6A; VCE= 5V
15
50
hFE-s
DC Current Gain
lc= 3A; VCE= 5V
8
COB
Output Capacitance
IE=0; VcB=10V;ftest=1.0MHz
80
pF
ft
Current-Gain— Bandwidth Product
lc=0.6A; VCE= 10V
18
MHz
E-! Classifications
L
M
N
15-30
20-40
30-50
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