2SC3092 Просмотр технического описания (PDF) - New Jersey Semiconductor
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2SC3092 Datasheet PDF : 2 Pages
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, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SC3092
DESCRIPTION
• High Breakdown Voltage-
: V(BR)CBO= SOOV(Min)
• Fast Switching Speed
• Wide Area of Safe Operation
APPLICATIONS
• Designed for switching regulator applications
ABSOLUTE MAXIMUM RATINGS(Ta=25r)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
800
V
VCEO
Collector-Emitter Voltage
500
V
VEBO
Emitter-Base Voltage
7
V
Ic
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
14
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25"C
Tj
Junction Temperature
3
A
90
W
150
"C
Tstg
Storage Temperature Range
-55-150
"C
1
[X^
rt
>
2
PIN 1.BASE
2. BETTER
3. COLLECT OR (CASE)
TO-3 package
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c
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it
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_i
Ti
IIHIl
MM MIN k'AX
A
3900
B 2S.38 26.67
C
7,80 8.30
T
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E
t .40 1 .60
6
1092
H
546
JS\0 13.50
L
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4.00 4 20
It 30 00 30 20
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N.I Semi-Conductors reserves the right to change test conditions, parameter limits anil package dimensions xvithout
notice. Information furnished by N.I Semi-Conductors is believed to he both accurate and reliable at the time of goini;
to press. I luuever, N.I Semi-ConducUirs assumes no responsibility for anv errors or omissions discovered in its use.
N.I Scnii-C'onduclors cncour:i»es customers In verily that dala.^lieets are current before placiny orders.
Quality 5emi-Conductors
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