FQD1N80TM(2014) Просмотр технического описания (PDF) - Fairchild Semiconductor
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Компоненты Описание
производитель
FQD1N80TM Datasheet PDF : 9 Pages
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Typical Characteristics
VGS
Top : 15.0 V
10.0 V
100
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
10-1
10-2
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
50
40
VGS = 10V
30
VGS = 20V
20
10
※ Note : TJ = 25℃
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
250
200
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
150
Coss
100
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
50
Crss
0
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
100
150oC
10-1
2
25oC
-55oC
※ Notes :
1. VDS = 50V
2. 250μ s Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
100
10-1
0.2
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
0.4
0.6
0.8
1.0
1.2
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
VDS = 160V
VDS = 400V
8
VDS = 640V
6
4
2
※ Note : ID = 1.0 A
0
0
1
2
3
4
5
6
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2009 Fairchild Semiconductor Corporation
3
FQD1N80 / FQU1N80 Rev. C2
www.fairchildsemi.com
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