FQD1N80TM(2014) Просмотр технического описания (PDF) - Fairchild Semiconductor
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FQD1N80TM Datasheet PDF : 9 Pages
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FQD1N80 / FQU1N80
N-Channel QFET® MOSFET
800 V, 1.0 A, 20 Ω
January 2014
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
Features
• 1.0 A, 800 V, RDS(on) = 2̀0 Ω (Max.) @ VGS = 10 V,
ID = 0.5 A
• Low Gate Charge (Typ. 5.5 nC)
• Low Crss (Typ. 2.7 pF)
• 100% Avalanche Tested
G
S
D
D-PAK
GDS
D
I-PAK
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering,
1/8" from case for 5 seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FQD1N80TM / FQU1N80TU
800
1.0
0.63
4.0
± 30
90
1.0
4.5
4.0
2.5
45
0.36
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
Parameter
RJC
RJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max.
FQD1N80TM /
FQU1N80TU
2.78
110
50
Unit
oC/W
©2009 Fairchild Semiconductor Corporation
1
FQD1N80 / FQU1N80 Rev. C2
www.fairchildsemi.com
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