BGA2003 Просмотр технического описания (PDF) - NXP Semiconductors.
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BGA2003 Datasheet PDF : 13 Pages
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NXP Semiconductors
Silicon MMIC amplifier
Product specification
BGA2003
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VS
VCTRL
IS
ICTRL
Ptot
Tstg
Tj
PARAMETER
supply voltage
voltage on control pin
supply current (DC)
control current
total power dissipation
storage temperature
operating junction temperature
CONDITIONS
RF input AC coupled
forced by DC voltage on RF input
or ICTRL
Ts ≤ 100 °C
MIN.
−
−
−
−
−
−65
−
MAX.
4.5
2
30
3
135
+150
150
UNIT
V
V
mA
mA
mW
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-s
thermal resistance from junction to soldering point
VALUE
350
UNIT
K/W
CHARACTERISTICS
RF input AC coupled; Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
IS
MSG
|s21|2
s12
NF
IP3(in)
supply current
maximum stable gain
insertion power gain
isolation
noise figure
input intercept point; note 1
VVS-OUT = 2.5 V; ICTRL = 0.4 mA
VVS-OUT = 2.5 V; ICTRL = 1.0 mA
VVS-OUT = 2.5 V; IVS-OUT = 10 mA;
f = 900 MHz
VVS-OUT = 2.5 V; IVS-OUT = 10 mA;
f = 1800 MHz
VVS-OUT = 2.5 V; IVS-OUT = 10 mA;
f = 900 MHz
VVS-OUT = 2.5 V; IVS-OUT = 10 mA;
f = 1800 MHz
VVS-OUT = 2.5 V; IVS-OUT = 0;
f = 900 MHz
VVS-OUT = 2.5 V; IVS-OUT = 0;
f = 1800 MHz
VVS-OUT = 2.5 V; IVS-OUT = 10 mA;
f = 900 MHz; ΓS = Γopt
VVS-OUT = 2.5 V; IVS-OUT = 10 mA;
f = 1800 MHz; ΓS = Γopt
VVS-OUT = 2.3 V; IVS-OUT = 3.6 mA;
f = 900 MHz
VVS-OUT = 2.3 V; IVS-OUT = 3.5 mA;
f = 1800 MHz
Note
1. See application note RNR-T45-99-B-0514.
MIN.
3
8
−
TYP.
4.5
11
24
MAX. UNIT
6
mA
15
mA
−
dB
−
16
−
dB
18
19
−
dB
13
14
−
dB
−
26
−
dB
−
20
−
dB
−
1.8 2
dB
−
1.8 2
dB
−
−6.5 −
dBm
−
−4.8 −
dBm
2010 Sep 13
3
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