BGA2003 Просмотр технического описания (PDF) - NXP Semiconductors.

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BGA2003

Silicon MMIC amplifier

NXP Semiconductors. 

NXP Semiconductors

Silicon MMIC amplifier

Product specification

BGA2003

FEATURES

• Low current

• Very high power gain

• Low noise figure

• Integrated temperature compensated biasing

• Control pin for adjustment bias current

• Supply and RF output pin combined.

PINNING

PIN

1

2

3

4

DESCRIPTION

GND

RF in

CTRL (bias current control)

VS + RF out

APPLICATIONS

• RF front end

• Wideband applications, e.g. analog and digital cellular

telephones, cordless telephones (PHS, DECT, etc.)

• Low noise amplifiers

• Satellite television tuners (SATV)

• High frequency oscillators.

DESCRIPTION

Silicon MMIC amplifier consisting of an NPN double

polysilicon transistor with integrated biasing for low voltage

applications in a plastic, 4-pin SOT343R package.

handbook, halfpage

3

4

CTRL VS+RFout

BIAS

CIRCUIT

2

Top view

1

MAM427

RFin

GND

Marking code: A3*

* = - : made in Hong Kong

* = p : made in Hong Kong

* = t : made in Malaysia

Fig.1 Simplified outline (SOT343R) and symbol.

QUICK REFERENCE DATA

SYMBOL

VS

IS

PARAMETER

DC supply voltage

DC supply current

MSG

maximum stable gain

NF

noise figure

CONDITIONS

RF input AC coupled

VVS-OUT = 2.5 V; ICTRL = 1 mA;

RF input AC coupled

VVS-OUT = 2.5 V; f = 1800 MHz;

Tamb = 25 °C

VVS-OUT = 2.5 V; f = 1800 MHz; ΓS = Γopt

TYP.

−

11

16

1.8

MAX.

4.5

−

−

−

UNIT

V

mA

dB

dB

2010 Sep 13

2

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