BB501M Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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производитель
BB501M Datasheet PDF : 13 Pages
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Maximum Channel Power
Dissipation Curve
200
150
100
50
0
50
100
150
200
Ambient Temperature Ta (°C)
BB501M
Typical Output Characteristics
20
VG2S = 4 V
V G1= VDS
16
12
8
R
=
G
22
kΩ
237368354k82976kΩΩkkkkkΩΩΩΩΩ
4
100 kΩ
0
1
2
3
4
5
Drain to Source Voltage VDS (V)
Drain Current vs. Gate1 Voltage
20
VDS = 5 V
RG = 33 kΩ
16
12
4V
3V
8
2V
4
VG2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V G1 (V)
Drain Current vs. Gate1 Voltage
20
VDS = 5 V
RG = 47 kΩ
16
12
3V 4V
8
2V
4
VG2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V G1 (V)
5
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