BB501M Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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BB501M Datasheet PDF : 13 Pages
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BB501M
Drain Current vs. Gate1 Voltage
20
VDS = 5 V
RG = 68 kΩ
16
12
8
3V 4V
4
2V
VG2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V G1 (V)
Forward Transfer Admittance
vs. Gate1 Voltage
30
VDS = 5 V
RG = 33 kΩ
24 f = 1 kHz
4V
3V
18
2V
12
6
VG2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V G1 (V)
Forward Transfer Admittance
vs. Gate1 Voltage
30
VDS = 5 V
RG = 47 kΩ
24 f = 1 kHz
4V
3V
18
2V
12
6
VG2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V G1 (V)
Forward Transfer Admittance
vs. Gate1 Voltage
30
VDS = 5 V
RG = 68 kΩ
24 f = 1 kHz
4V
3V
18
2V
12
6
VG2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V G1 (V)
6
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