2N6253 Просмотр технического описания (PDF) - New Jersey Semiconductor
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2N6253 Datasheet PDF : 2 Pages
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, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
2N6253
DESCRIPTION
• Excellent Safe Operating Area
• DC Current Gain-hFE=20-70@lc = 3A
• Collector-Emitter Saturation Voltage-
:VCE(sat)=1.0V(Max)@lc = 3A
APPLICATIONS
• Series and shunt regulators
• High-fidelity amplifiers
• Power-switching circuits
• Solenoid drivers
• Low-frequency inverters
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
3
I
•) K^
^S
2
PIN
I.BASE
2, EMITTER
3. COLLECT OR (CASE)
TO-3 package
VCBO
VCER
VCEO
VCEV
VEBO
Ic
IB
PC
Tj
Tstg
Collector-Base Voltage
55
V
55
V
Collector-Emitter Voltage
45
V
Collector-Emitter Voltage VBE= -1 .5V
55
V
Emitter-Base Voltage
5
V
Collector Current-Continuous
15
A
Base Current
7
A
Junction Temperature
115
W
200
°c
Storage Temperature
-65-200 'C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance.Junction to Case
MAX
1.5
UNIT
•c/w
•m
A
»|
I*~N~*1 1 I
i__l LJ c
II
:
~JU~ D 3 PL
S3
/*"* ~"\' 1
t
^-S---^ ci B
T
iV^^X^
I (
v-j^l
HUH
DIM MIN MAX
A
3300
B 25.30 26.6?
C
7-30 8.30
D
0.90 1 10
E
1 40 1 60
ij
109?
H
5 4&
K 11.10 13,50
L 1675 1705
H 1940 1962
Q
400 420
U 3000 5020
V
4,30 450
NJ Semi-Conductors reserves Ihe right to change test conditions, parameter limits and package dimensions without
notice. Intbrmation furnished hy N.I Semi-Conductors is helievecl to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
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