2N6253 Просмотр технического описания (PDF) - New Jersey Semiconductor

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2N6253

Silicon NPN Power Transistor

New Jersey Semiconductor 

Silicon NPN Power Transistor

ELECTRICAL CHARACTERISTICS

Tc=25"C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VcEO(SUS) Collector-Emitter Sustaining Voltage lc= 200mA; IB= 0

VcER(SUS) Collector-Emitter Sustaining Voltage lo= 200mA; RBE= 100^

VcEV(SUS) Collector-Emitter Sustaining Voltage lc= 100mA; VBE= -1.5V

VoE(sat)-i Collector-Emitter Saturation Voltage lc= 3A; IB=0.3A

VcE(sat)-2 Collector-Emitter Saturation Voltage IC=15A;IB=5A

VsE(on) Base-Emitter On Voltage

lc= 3A; VCE= 4V

ICEO

Collector Cutoff Current

ICEX

Collector Cutoff Current

IEBO

Emitter Cutoff Current

VCE= 25V; IB= 0

VCE= 55V; VBE(ofn= -1.5V

VCE= 50V; VBE<off)= -1.5V,TC=150'C

VEB= 5V; lc=0

hpE-1

DC Current Gain

lc= 3A ; VCE= 4V

hFE-2

U/b

DC Current Gain

Second Breakdown Collector

Current with Base Forward Biased

lc= 1 5A ; VCE= 4V

VCE= 45V, t= 1.0s, Nonrepetitive

2N6253

MIN MAX UNIT

45

V

55

V

55

V

1.0

V

4.0

V

1.7

V

1.5

mA

2.0

10

mA

10

mA

20

70

3

2.55

A

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