SI3850DV Просмотр технического описания (PDF) - Vishay Semiconductors
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SI3850DV Datasheet PDF : 8 Pages
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Si3850DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
P-CHANNEL
Source-Drain Diode Forward Voltage
4.0
On-Resistance vs. Gate-to-Source Voltage
2.0
TJ = 150_C
1.0
TJ = 25_C
1.5
1.0
0.5
ID =0.85 A
0.1
0.0
0.3
0.6
0.9
1.2
1.5
VSD − Source-to-Drain Voltage (V)
Threshold Voltage
0.4
0.3
0.2
ID = 250 mA
0.1
0.0
−0.1
0.0
0
1
2
3
4
5
VGS − Gate-to-Source Voltage (V)
Single Pulse Power
30
24
18
12
6
−0.2
−50 −25
2
0 25 50 75 100 125 150
0
0.001
0.010
0.100
1.000
TJ − Temperature (_C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
10.000
0.2
0.1
0.1
0.05
0.02
0.01
10−4
Single Pulse
10−3
10−2
10−1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 100_C/W
3. TJM − TA = PDMZthJA(t)
4. Surface Mounted
1
10
30
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?70778.
www.vishay.com
6
Document Number: 70778
S-50132—Rev. D, 24-Jan-05
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