Si3850DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N-CHANNEL
Source-Drain Diode Forward Voltage
4.0
On-Resistance vs. Gate-to-Source Voltage
0.8
TJ = 150_C
0.6
1.0
0.4
TJ = 25_C
0.2
ID = 1.2 A
0.1
0.0
0.3
0.6
0.9
1.2
1.5
VSD − Source-to-Drain Voltage (V)
Threshold Voltage
0.2
0.0
0
1
2
3
4
5
VGS − Gate-to-Source Voltage (V)
Single Pulse Power
30
0.1
24
−0.0
ID = 250 mA
18
−0.1
12
−0.2
−0.3
6
−0.4
−50 −25
2
0 25 50 75 100 125 150
0
0.001
0.010
0.100
1.000
TJ − Temperature (_C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
10.000
0.2
0.1
0.1
0.05
0.02
0.01
10−4
Single Pulse
10−3
www.vishay.com
4
10−2
10−1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 100_C/W
3. TJM − TA = PDMZthJA(t)
4. Surface Mounted
1
10
30
Document Number: 70778
S-50132—Rev. D, 24-Jan-05