SI3850DV Просмотр технического описания (PDF) - Vishay Semiconductors
Номер в каталоге
Компоненты Описание
производитель
SI3850DV Datasheet PDF : 8 Pages
| |||
Si3850DV
Vishay Siliconix
Complementary MOSFET Half-Bridge (N- and P-Channel)
PRODUCT SUMMARY
VDS (V)
N-Channel
20
P-Channel
−20
rDS(on) (W)
0.500 @ VGS = 4.5 V
0.750 @ VGS = 3.0 V
1.00 @ VGS = −4.5 V
1.30 @ VGS = −3.0 V
ID (A)
1.2
1.0
−0.85
−0.75
FEATURES
D 100% Rg Tested
TSOP-6
Top View
G1
1
6
S1
D
2
5
D
G2
3
4
S2
Ordering Information: Si3850DV-T1
Si3850DV-T1—E3 (Lead (Pb)-Free)
S2
G2
D
G1
S1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
(Surface Mounted on FR4 Board)
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
20
−20
"12
1.2
−0.85
0.95
−0.65
3.5
−2.5
1
−1
1.25
0.8
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (Surface Mounted on FR4 Board, " v 10 sec)
Symbol
RthJA
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70778
S-50132—Rev. D, 24-Jan-05
N- or P- Channel
100
Unit
_C/W
www.vishay.com
1
Share Link: 