SI3850DV(1998) Просмотр технического описания (PDF) - Vishay Semiconductors
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производитель
SI3850DV Datasheet PDF : 6 Pages
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Si3850DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
NĆCHANNEL
Output Characteristics
3.5
VGS = 5.0 thru 4.0 V
3.0
2.5
2.0
3.5 V
3.0 V
Transfer Characteristics
3.5
TC = –55_C
3.0
25_C
2.5
125_C
2.0
1.5
1.5
2.5 V
1.0
1.0
0.5
1.5 V
2.0 V
0.5
0
0
0.5
1.0
1.5
2.0
2.5
3.0
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.7
VGS = 3.0 V
0.6
0.5
VGS = 4.5 V
0.4
0.3
0.2
0.1
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5
ID – Drain Current (A)
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VGS – Gate-to-Source Voltage (V)
Capacitance
120
100
80
Ciss
60
Coss
40
20
Crss
0
0
4
8
12
16
20
VDS – Drain-to-Source Voltage (V)
5
VGS = 10 V
ID = 1.2 A
4
Gate Charge
On-Resistance vs. Junction Temperature
2.0
VGS = 4.5 V
ID = 1.2 A
1.6
3
1.2
2
0.8
1
0.4
0
0
0.2
0.4
0.6
0.8
Qg – Total Gate Charge (nC)
0
–50 –25 0
25 50 75 100 125 150
TJ – Junction Temperature (_C)
Document Number: 70778
S-55457—Rev. B, 09-Mar-98
www.vishay.com S FaxBack 408-970-5600
2-3
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