SI3850DV(1998) Просмотр технического описания (PDF) - Vishay Semiconductors
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SI3850DV Datasheet PDF : 6 Pages
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Si3850DV
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = VGS, ID = –250 mA
VDS = 0 V, VGS = "12 V
VDS = 20 V, VGS = 0 V
VDS = –20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 70_C
VDS = –20 V, VGS = 0 V, TJ = 70_C
VDS = 5 V, VGS = 4.5 V
VDS = –5 V, VGS = –4.5 V
VGS = 4.5 V, ID = 0.5 A
VGS = –4.5 V, ID = –0.5 A
VGS = 3.0 V, ID = 0.5 A
VGS = –3.0 V, ID = –0.5 A
VDS = 10 V, ID = 1.2 A
VDS = –10 V, ID = –0.85 A
IS = 1 A, VGS = 0 V
IS = –1 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
N-Channel
VDS = 10 V, VGS = 4.5 V, ID = 1.2 A
Qgs
P-Channel
VDS = –10 V, VGS = –4.5 V
Qgd
ID = –0.85 A
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
N-Channel
VDD = 10 V, RL = 10 W
ID ^ 1 A, VGEN = 4.5 V, RG = 6 W
P-Channel
VDD = –10 V, RL = 10 W
ID ^ –1 A, VGEN = –4.5 V, RG = 6 W
IF = 1 A, di/dt = 100 A/ms
IF = –1 A, di/dt = 100 A/ms
Min Typ Max Unit
N-Ch
0.6
P-Ch –0.6
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
3.0
P-Ch –2.0
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
V
"100
nA
1
–1
mA
10
–10
A
0.38 0.500
0.70
1.00
W
0.55 0.750
1.10
1.30
2.7
S
1.2
1.2
V
–1.2
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.8
2.0
1.10
2.5
0.25
nC
0.50
0.2
0.2
10
20
8
15
20
40
20
40
20
40
ns
10
20
16
30
8
15
40
80
40
80
www.vishay.com S FaxBack 408-970-5600
2-2
Document Number: 70778
S-55457—Rev. B, 09-Mar-98
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