FQD5N50(1999) Просмотр технического описания (PDF) - Fairchild Semiconductor
Номер в каталоге
Компоненты Описание
производитель
FQD5N50 Datasheet PDF : 7 Pages
| |||
FQD5N50, FQU5N50
QFET N-CHANNEL
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
Symbol
BVDSS
∆BV/∆TJ
VGS(th)
IGSS
Characteristics
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage, Forward
Gate-Source Leakage, Reverse
IDSS Drain-to-Source Leakage Current
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain (Miller) Charge
Min.
500
−
3.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ.
−
0.47
−
−
−
−
−
1.36
3.6
470
75
8.5
13
55
25
35
13
3.4
6.4
Max.
−
−
5.0
100
−100
1
10
Units
Test Conditions
V
V/°C
V
nA
µA
VGS=0V, ID=250µA
ID=250µA, See Fig 7
VDS=5V, ID=250µA
VGS=30V
VGS= −30V
VDS=500V
VDS=400V, TC=125°C
1.8
Ω VGS=10V, ID=1.75A {
−
S VDS=50V, ID=1.75A {
610
VGS=0V, VDS=25V
95
pF f=1MHz
11
See Fig 5
35
120
VDD=250V, ID=4.5A
60
ns RG=50Ω
See Fig 13
{|
80
17
VDS=400V, VGS=10V
−
nC ID=4.5A
−
See Fig 6 & Fig 12 { |
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
VSD
trr
Qrr
Characteristics
Continuous Source Current
Pulsed-Source Current
x
Diode Forward Voltage
{
Reverse Recovery Time
Reverse Recovery Charge
Min.
−
−
−
−
−
Typ.
−
−
−
215
1.26
Max.
3.5
14
1.4
−
−
Units
Test Conditions
Integral reverse pn-diode
A
in the MOSFET
V TJ=25°C, IS=3.5A, VGS=0V
ns TJ=25°C, IF=4.5A, VDD=400V
µC diF/dt=100A/µs
{
Notes:
x Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
y L=44mH, IAS=3.5A, VDD=50V, RG=25Ω, Starting TJ =25°C
z ISD ≤ 4.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ =25°C
{ Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%
| Essentially Independent of Operating Temperature
2
Share Link: 