FQD5N50(1999) Просмотр технического описания (PDF) - Fairchild Semiconductor
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FQD5N50 Datasheet PDF : 7 Pages
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QFET N-CHANNEL
FQD5N50, FQU5N50
FEATURES
• Advanced New Design
• Avalanche Rugged Technology
• Rugged Gate Oxide Technology
• Very Low Intrinsic Capacitances
• Excellent Switching Characteristics
• Unrivalled Gate Charge: 13nC (Typ.)
• Extended Safe Operating Area
• Lower RDS(ON): 1.36Ω (Typ.)
ABSOLUTE MAXIMUM RATINGS
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Characteristics
Drain-to-Source Voltage
Continuous Drain Current (TC = 25°C)
Continuous Drain Current (TC = 100°C)
Drain Current-Pulsed
x
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
y
Avalanche Current
x
Repetitive Avalanche Energy
x
Peak Diode Recovery dv/dt
z
Total Power Dissipation (TA = 25°C) *
Total Power Dissipation (TC = 25°C)
Linear Derating Factor
Operating Junction and Storage
Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
BVDSS = 500V
RDS(ON) = 1.8Ω
ID = 3.5A
D-PAK
I-PAK
2
1
3
1
2
3
FQD5N50
FQU5N50
1. Gate 2. Drain 3. Source
Value
500
3.5
2.2
14
±30
300
3.5
5.0
4.5
2.5
50
0.4
−55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
THERMAL RESISTANCE
Symbol
Characteristics
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
−
−
−
1999 Fairchild Semiconductor Corporation
Max.
2.5
50
110
Units
°C/W
REV. B
1
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