2SJ546 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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Компоненты Описание

производитель

2SJ546

Silicon P Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SJ546

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

–4.0

Pulse Test

–3.2

–2.4

–1.6

I D = –15 A

–0.8

–10 A

–5 A

0

–4 –8 –12 –16 –20

Gate to Source Voltage V GS (V)

Static Drain to Source on State Resistance

vs. Drain Current

10

Pulse Test

3

1

0.3

VGS = –4 V

0.1

–10 V

0.03

0.01

–0.1 –0.3 –1 –3 –10 –30 –100

Drain Current I D (A)

Static Drain to Source on State Resistance

vs. Temperature

0.40

Pulse Test

0.32

0.24

I D = –15 A –10 A –5 A

0.16 VGS = –4 V

0.08

0

–40

–10 V

–5, –10, –15 A

0

40 80 120 160

Case Temperature Tc (°C)

Forward Transfer Admittance vs.

Drain Current

100

V DS = –10 V

30 Pulse Test

Tc = –25 °C

10

3

25 °C

1

75 °C

0.3

0.1

–0.1 –0.3 –1 –3 –10 –30 –100

Drain Current I D (A)

4

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