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2SJ546 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
Номер в каталоге
Компоненты Описание
производитель
2SJ546
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
2SJ546 Datasheet PDF : 9 Pages
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2SJ546
Silicon P Channel MOS FET
High Speed Power Switching
Features
•
Low on-resistance
R
DS(on)
= 0.075
Ω
typ.
•
Low drive current.
•
4V gate drive devices.
•
High speed switching.
Outline
TO–220CFM
ADE-208-638A (Z)
2nd. Edition
Jun 1998
D
G
S
123
1. Gate
2. Drain
3. Source
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